04n80c3 datasheet pdf storage

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Part number top mark package reel size tape width quantity fqp7n80c fqp7n80c to220 na na 50 units packing method tube fqpf7n80c fqpf7n80c to220f tube na na 50 units notes. Jun 07, 2016 07n60c3 datasheet vds650v, power transistor infineon, spp07n60c3, spi07n60c3 datasheet, 07n60c3 pdf, 07n60c3 pinout, 07n60c3 manual, 07n60c3 schematic. I electrical characteristics tc25c, unless otherwise specified parameter symbol test conditions min typ max unit. This data sheet may be revised by subsequent versions 2004 eon silicon solution, inc. Spd04n80c3coolmostm power transistorfeatures new revolutionary high voltage technology extreme dvdt rated high peak current capability qualified according to jedec1 for target applications pbfree lead plating. Operating and storage temperature t j, stg c mounting torque m3 and m3. K3566 datasheet vdss900v, n channel mosfet toshiba. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. November 2012 doc id 15420 rev 5 121 21 stfnm60n, stinm60n, stpnm60n, stunm60n, stwnm60n. Static characteristics tj 25c unless otherwise stated. Description the tyntxn 0512 tyntxn 1012 family of silicon controlled rectifiers. Spp11n60c3 mosfet nch 650v 11a to220ab infineon technologies datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Id l high speed power switching l hard switched and high frequency circuits 650v 155m 22a l leadfree benefits d l ultra low gate charge qg results in simple. Recent listings manufacturer directory get instant.

When the internal program or erase operation is completed, the toggling. Spa04n80c3 infineon technologies, spa04n80c3 datasheet. Toshiba field effect transistor silicon n channel mos type. Select the part name and then you can download the datasheet in pdf format.

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Mosfet nch 800v 4a to220fp online from elcodis, view and download spa04n80c3 pdf datasheet, mosfets, ganfets single specifications. Spp04n80c3 spa04n80c3 cool mos power transistor vds feature. Junction and storage temperature range t j, t stg55150 oc id limited by maximum junction temperature thermal characteristics characteristics symbol rating unit thermal resistance, junctiontoambient1 r. Spa04n80c3coolmostm power transistorfeatures new revolutionary high voltage technology extreme dvdt rated high peak current capability qualified according to jedec1 for target applications pbfree lead plating. Spd04n80c3 cool mos power transistor vds feature r. Mosvi 2sk4111 switching regulator applications low drainsource on resistance. Fqp7n80c fqpf7n80c nchannel qfet mosfet electrical characteristics tc 25c unless otherwise noted. O absolute maximum ratings tc25c unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 10 a drain current continuous id 10 a pulsed note 2 idm 38 a avalanche energy. Spd04n80c3 datasheetpdf 1 page infineon technologies ag. Absolute maximum ratings are those values beyond which the device could be permanently damaged. It uses sas and sata drives in the same enclosures to create a tiered storage architecture. Spd04n80c3 datasheet pdf 1 page infineon technologies ag. Fqp3n80cfqpf3n80c 800v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. S7114903000 401 394 toggle bit dq6 during the internal program or erase operation, any consecutive attempts to read dq6 will produce alternating 0s and 1s, i.